Application of the Quasi-enclosed Space Effect in the Formation of Conductive Films on Ceramics by Magnetron Sputtering

The application of the quasi-closed space effect in the formation of conductive films on ceramics by magnetron sputtering is discussed. This method provides the most flexible possibilities for varying process conditions and thereby influencing the characteristics of the resulting films. One of the process conditions of magnetron sputtering that affects the homogeneity of the composition of the resulting film is the formation of a quasi-closed space in the film deposition zone. A variant of implementing a quasi-closed space is proposed, and a series of copper films are formed using a quasi-closed space and without it. Adhesion and specific surface resistance of the films are determined, and the thickness is determined and the homogeneity of the structures obtained is estimated using scanning electron microscopy. The reduction in the number of defects in conductive films is associated with a higher pressure in the film formation zone in relation to the rest of the vacuum chamber space when implementing a quasi-closed space; the difference in pressure and plasma-forming gas allows, on the one hand, to stabilize the main characteristics of the magnetron discharge, and consequently the film formation process, and on the other hand, to minimize the possibility of including various types of contaminating inclusions in the film structure.

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