V. N. Fedorinin
Rzhanov Institute of Semiconductor Physics of the SB RAS, Design and Technology Institute of Applied Microelectronics
Russian Federation

Victor N. Fedorinin — PhD; Rzhanov Institute of Semiconductor Physics of the SB RAS, Design and Technology Institute of Applied Microelectronics, Department of Photochemical Technologies; Leading Engineer.

Novosibirsk

S. A. Kuznetsov
Rzhanov Institute of Semiconductor Physics of the SB RAS, Design and Technology Institute of Applied Microelectronics; Novosibirsk State University
Russian Federation

Sergei A. Kuznetsov — Rzhanov Institute of Semiconductor Physics of the SB RAS, Design and Technology Institute of Applied Microelectronics, Department of Photochemical Technologies; Researcher.

Novosibirsk

V. A. Shvets
Rzhanov Institute of Semiconductor Physics of the SB RAS
Russian Federation

Vasily A. Shvets — Dr. Sci.; Rzhanov Institute of Semiconductor Physics of the SB RAS, Laboratory of Ellipsometry of Semiconductor Materials and Structures; Leading Researcher.

Novosibirsk

A. V. Arzhannikov
Novosibirsk State University; Budker Institute of Nuclear Physics of the SB RAS
Russian Federation

Andrey V. Arzhannikov — Dr. Sci. Professor; профессор; Novosibirsk State University, Department of Plasma Physics; Chief Researcher.

Novosibirsk

A. V. Gelfand
Rzhanov Institute of Semiconductor Physics of the SB RAS, Design and Technology Institute of Applied Microelectronics
Russian Federation

Alexander V. Gelfand - Rzhanov Institute of Semiconductor Physics of the SB RAS, Design and Technology Institute of Applied Microelectronics, Department of Photochemical Technologies; Head of the Department.

Novosibirsk

A. Yu. Gorshkov
Rzhanov Institute of Semiconductor Physics of the SB RAS, Design and Technology Institute of Applied Microelectronics
Russian Federation

Alexander Yu. Gorshkov - Rzhanov Institute of Semiconductor Physics of the SB RAS, Design and Technology Institute of Applied Microelectronics; Leading Design Engineer.

Novosibirsk